isocom components ltd unit 25b, park view road west, park view industrial estate, brenda road hartlepool, cleveland, ts25 1yd tel: (01429) 863609 fax :(01429) 863581 10/10/00 db92043-aas/a1 side looking detector photodarlington output IS659D dimensions in mm absolute maximum ratings (25c unless otherwise specified) storage temperature -40c to + 85c operating temperature -25c to + 85c lead soldering temperature (1/16 inch (1.6mm) from case for 10 secs) 260c output transistor collector-emitter voltage bv ceo 35v emitter-collector voltage bv eco 6v collector current i c 50ma power dissipation 75mw description the IS659D is a npn silicon photo darlington mounted in a lateral side looking package. it is can be used in conjunction with is658a - ( gallium arsenide emitting diode ). features l side looking package. l IS659D has dark plastic package for visible light cut out l high sensitivity :- 0.9ma min. i c at ee = 0.1mw/cm 2 l all electrical parameters are 100% tested applications l floppy disk drives l infrared applied systems l vcrs, video camera l optoelectronic switches 1.6 2.2 3.0 3.0 2.8 0.3 max r 0.8 c 0.5 4.0 0.8 max 16.5 min 0.5 min 2.54 1.7 1.15 1.5 0.75 60 0.15 0.4 r 0.5 0.8 1.4 0.45 0.8 2 2 1 1 isocom inc 1024 s. greenville ave, suite 240, allen, tx 75002 usa tel: (214) 495-0755 fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com
db92043-aas/a1 10/10/00 parameter min typ max units test condition collector-emitter breakdown ( bv ceo ) 35 v i c = 1ma, ( note 1 ) ee = 0mw/cm 2 emitter-collector breakdown (bv eco ) 6 v i e = 100 m a, ee = 0mw/cm 2 collector-emitter dark current ( i ceo ) 100 na v ce = 10v, ee = 0mw/cm 2 on-state collector current i c ( on ) 0.9 27 ma v ce = 2v, ee = 0.1mw/cm 2 collector-emitter saturation voltage v ce(sat) 1.0 v i c = 1.5ma, ee = 1mw/cm 2 rise time tr 80 m s v ce = 2v, i c = 10ma, fall time tf 70 m s r l = 100 w peak sensitivity wavelength 860 nm i f = 20ma beam acceptance angle 13 deg. electrical characteristics ( t a = 25c unless otherwise noted ) note 1 special selections are available on request. please consult the factory.
db92043-aas/a1 10/10/00 1 5 20 distance to emitter d (mm) 1 2 5 10 20 50 100 0.01 0.02 0.05 0.1 0.2 0.5 1.0 irradiance ee ( mw/cm 2 ) collector current i c (ma) collector current vs. irradiance 1 2 5 10 20 50 relative output vs. distance ( emitter : is658a ) relative collector current (%) ambient temperature t a ( c ) relative collector current vs. ambient temperature relative collector current ( % ) -25 0 25 50 75 100 -25 0 25 50 75 100 125 ambient temperature t a ( c ) 50 0 75 collector power dissipation p c (mw) collector power dissipation vs. ambient temperature 25 100 0 50 wavelength (nm) 700 900 1100 10 20 50 100 200 500 1000 load resistance r l ( w) rise and fall time tr, tf ( m s) rise and fall time vs. load resistance 10 20 50 100 200 500 v ce = 2v i c = 10ma t a = 25c spectral sensitivity relative sensitivity (%) 50 tf tr 1000 100 10 100 25 75 0 100 50 125 150 175 v ce = 2v t a = 25c 100 2 v ce = 2v ee = 0.1mw/cm 2 t a = 25c
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